NAND Flash Memory Market - Growth, Trends, and Forecast (2019 - 2024)

The market is segmented by Type (SLC, MLC, and TLC), Structure (2-D Structure and 3-D Structure), Application (Smartphones, SSD, Memory Cards, and Tablets), and Region.

Market Snapshot

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Study Period:

2018-2024

Base Year:

2018

Fastest Growing Market:

Asia Pacific

Largest Market:

Asia Pacific

Key Players:

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Market Overview

The NAND flash memory market is expected to register a CAGR of 9.1%, during the forecast period (2019 - 2024). The current macro trends of AI and machine learning, mobility, and connectivity are favorable to the NAND markets and expected to result in memory continuing to increase its share in the semiconductor market.

  • The increasing penetration of smart devices due to smart city trends and factory automation require the storage of massive amounts of data. The consumer technology industry revenue in the United States was expected to grow by 6% in 2018, USD 377 billion in retail revenues, according to the Consumer Technology Association. 
  • With continuous upgradations in the consumer electronics technology, the need for smaller size, more reliable, and low-cost storage solutions demand is picking up. Newly emerging NVM (Non-Volatile Memory) technologies, offering increased speed and durability compared with NAND, are expected to begin playing a significant role and encroach on the market share of NAND by 2020.

Scope of the Report

3D NAND is the successor to 2D NAND flash memory for storage applications, such as smartphones and solid-state storage drives (SSDs). Challenges with 3D stacking remain and the opportunity in scaling, concerning the number of layers remain to be seen.

Type
SLC (One-bit Per Cell)
MLC (Two-bit Per Cell)
TLC (Three-bit Per Cell)
Structure
2D Structure
3D Structure
Application
Smartphone
SSD
Memory Card
Tablet
Other Applications
Geography
North America
Europe
Asia Pacific
Latin America
Middle East & Africa

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Key Market Trends

Smartphone segment is Expected to Witness Significant Growth

  • Improving the scaling limits year on year, smartphone manufacturers sell smartphones at a premium by upgrading the memory capacity to boost the performance.
  • With 5G wireless communication on its way, the use of smartphones would increase multifold, increasing the demand for the latest models to raise the bar continuously.
  • Samsung, four years after launching the first universal flash storage solution, the 128-gigabyte (GB) eUFS, has passed the terabyte threshold in smartphone storage using its in-house most advanced 512-gigabit (Gb) V-NAND flash memory.
  • Flash memory storage has become an essential component in smartphones, not only for consumers whose demand for storage keeps on increasing with content creation but also for OEMs from bill of materials (BoM) cost perspective. The NAND flash demand has been growing exponentially, primarily driven by the growth of the average capacity in smartphones, which was expected to cross 60GB per smartphone in Q4 2018.
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Asia-Pacific Holds the Largest Market Share

Asia-Pacific is one of the largest markets for NAND flash in the world. The region has a high demand from almost all the end-user applications alike, primarily led by the demand for smartphones in several developing countries in the region, such as China, India, Indonesia, etc.

  • There is a high activity from the semiconductor fabrication facilities in countries like China, Korea, and Singapore. The Chinese government's initiatives, such as Made in China 2025 has drawn substantial capital from memory manufacturers. The country has set goals to reach USD 305 billion in semiconductor output by 2030 and meet at least 80 of domestic demand for semiconductors, which are expected to draw more investments into the country.
  • Owing to such developments in China, several competitors in the region are intensifying their efforts of expansion. For example, as of February 2019, SK Hynix, the world’s second largest memory-chip maker announced that it is planning to invest USD 106 billion to establish four new semiconductor fabrication plants in Seoul, South Korea.
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Competitive Landscape

The NAND flash memory market is dominated by major vendors, such as Intel, Micron Technology, Samsung Electronics, SanDisk, SK Hynix, and Toshiba. As the entry barriers in the market are high, the entry of new players is difficult. The existing vendors in the market are investing heavily in the R&D of new and innovative products.

  • NAND chip-level players, such as Intel, Micron, Samsung, SanDisk/Toshiba, and SK Hynix have successfully increased profitability and captured additional value through forward integration to the NAND system level, with offerings, such as solid-state drives for enterprise data centers and cloud computing and embedded solutions.
  • In December 2018, Samsung released a multi-terabyte 860 QVO SSD built with  high-density 4-bit multi-level cell (MLC) NAND flash architecture
  • China’s Yangtze Memory Technologies Co. (YMTC) received billions of dollars in funding from the Chinese government and introduced its first 3D NAND technology in 2018.

Major Players

  1. Samsung Electronics Co. Ltd
  2. Micron Technology Inc.
  3. SK Hynix Inc.
  4. Intel Corporation
  5. Toshiba Corporation

* Complete list of players covered available in the table of contents below

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Table of Contents

  1. 1. INTRODUCTION

    1. 1.1 Study Deliverables

    2. 1.2 Study Assumptions

    3. 1.3 Scope of the Study

  2. 2. RESEARCH METHODOLOGY

  3. 3. EXECUTIVE SUMMARY

  4. 4. MARKET DYNAMICS

    1. 4.1 Market Overview

    2. 4.2 Introduction to Market Drivers and Restraints

    3. 4.3 Market Drivers

      1. 4.3.1 Increasing Demand For Low-cost Storage Solutions

      2. 4.3.2 Increasing Penetration Of Smart Devices

    4. 4.4 Market Restraints

      1. 4.4.1 High Initial Cost Of Flash Memory

    5. 4.5 Industry Attractiveness - Porter's Five Forces Analysis

      1. 4.5.1 Threat of New Entrants

      2. 4.5.2 Bargaining Power of Buyers/Consumers

      3. 4.5.3 Bargaining Power of Suppliers

      4. 4.5.4 Threat of Substitute Products

      5. 4.5.5 Intensity of Competitive Rivalry

  5. 5. MARKET SEGMENTATION

    1. 5.1 Type

      1. 5.1.1 SLC (One-bit Per Cell)

      2. 5.1.2 MLC (Two-bit Per Cell)

      3. 5.1.3 TLC (Three-bit Per Cell)

    2. 5.2 Structure

      1. 5.2.1 2D Structure

      2. 5.2.2 3D Structure

    3. 5.3 Application

      1. 5.3.1 Smartphone

      2. 5.3.2 SSD

      3. 5.3.3 Memory Card

      4. 5.3.4 Tablet

      5. 5.3.5 Other Applications

    4. 5.4 Geography

      1. 5.4.1 North America

      2. 5.4.2 Europe

      3. 5.4.3 Asia Pacific

      4. 5.4.4 Latin America

      5. 5.4.5 Middle East & Africa

  6. 6. COMPETITIVE LANDSCAPE

    1. 6.1 Vendor Market Share

    2. 6.2 Company Profiles

      1. 6.2.1 Samsung Electronics Co. Ltd

      2. 6.2.2 Toshiba Corporation

      3. 6.2.3 Micron Technology Inc.

      4. 6.2.4 SK Hynix Inc.

      5. 6.2.5 Intel Corporation

      6. 6.2.6 Renesas Electronics Corporation

      7. 6.2.7 SanDisk Corp.

      8. 6.2.8 Powerchip Technology Corporation

      9. 6.2.9 Cypress Semiconductor Corporation

    3. *List Not Exhaustive
  7. 7. MARKET OPPORTUNITIES AND FUTURE TRENDS

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