Who are the key players in Japan Power Transistor Market?

Champion Microelectronics Corporation, Fairchild Semiconductor International Inc., Infineon Technologies AG, Renesas Electronics Corporation and NXP Semiconductors N.V. are the major companies operating in the Japan Power Transistor Market. Read More

What years does this Japan Power Transistor Market cover, and what was the market size in 2023?

In 2023, the Japan Power Transistor Market size was estimated at USD 2.97 billion. The report covers the Japan Power Transistor Market historical market size for years: 2019, 2020, 2021, 2022 and 2023. The report also forecasts the Japan Power Transistor Market size for years: 2024, 2025, 2026, 2027, 2028 and 2029. Read More

Japan Power Transistor Market Size

Market Size of Japan Power Transistor Industry

Study Period	2019 - 2029
Base Year For Estimation	2023
Market Size (2024)	USD 3.08 Billion
Market Size (2029)	USD 3.66 Billion
CAGR (2024 - 2029)	3.50 %
Market Concentration	Low
Major Players *Disclaimer: Major Players sorted in no particular order

Japan Power Transistor Market Analysis

The Japan Power Transistor Market size is estimated at USD 3.08 billion in 2024, and is expected to reach USD 3.66 billion by 2029, growing at a CAGR of 3.5% during the forecast period (2024-2029).

In Japan, the automotive industry accounts for a significant share of the total demand for semiconductors in the country, having emerged as the 5th largest automobile market in 2022, as per the German Association of the Automotive Industry or VDA. The automotive industry's migration from fossil fuel vehicles to hybrid and electric vehicles drives the demand for power devices.

As per the collaboration, an IGBT line would be installed at USJC's wafer fab, which would be the first in Japan to produce IGBTs on 300mm wafers. DENSO would contribute its system-oriented IGBT device and process technologies.
At the same time, USJC will provide its 300mm wafer manufacturing capabilities to bring the 300 mm IGBT process into mass production, scheduled to start in the first half of 2023. IGBTs are perceived as core devices in power cards, serving as efficient power switches in inverters to convert DC and AC currents to drive and control electric vehicle motors.
Further, in February 2022, Toshiba Electronic Devices & Storage Corporation announced that it would construct a new 300-millimeter wafer fabrication facility for power semiconductors, including transistors at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, its main discrete semiconductor production base. Construction is expected to occur in two phases, with the production start of Phase 1 scheduled for 2024. When Phase 1 reaches total capacity, Toshiba's power semiconductor production capacity will be 2.5 times that of fiscal 2021.
Also, in January 2022, Toshiba Electronic Devices & Storage Corporation launched two silicon carbide (SiC) MOSFET dual modules: 'MG600Q2YMS3', with a voltage rating of 1200V and drain current rating of 600A and 'MG400V2YMS3', with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings joined the previously released MG800FXF2YMS3 in a 1200V, 1700V, and 3300V devices lineup.

Japan Power Transistor Industry Segmentation

The power transistors are used to amplify and regulate signals. They are made from high-performance semiconductor materials like germanium and silicon. These transistors can amplify and control a certain voltage level and handle specific ranges of high-level and low-level voltage ratings.

The study includes different products low-voltage FETs, IGBT modules, RF and microwave transistors, high-voltage FETs, IGBT transistors, and different types such as bipolar junction transistors, field effect transistors, heterojunction bipolar transistors for various end-user industries like consumer electronics, communication, and technology, automotive, manufacturing, and energy & power. The competitive landscape takes into account multiple companies' market penetration, as well as their organic and inorganic growth strategies.

For all of the above segments, market sizes, and forecasts are provided in terms of value (USD).

By Product
		Low-Voltage FETs
		IGBT Modules
		RF and Microwave Transistors
		High Voltage FETs
		IGBT Transistors

By Type
		Bipolar Junction Transistor
		Field Effect Transistor
		Heterojunction Bipolar Transistor
		Others (MOSFET, JFET, NPN Transistor, PNP Transistor, GaN transistor)

By End-user Industry
		Consumer Electronics
		Communication and Technology
		Automotive
		Manufacturing
		Energy & Power
		Other End-user Industries

Need A Different Region Or Segment?

Customize Now

Japan Power Transistor Market Size Summary

The Japan power transistor market is poised for growth, driven by the increasing demand from the automotive and consumer electronics sectors. The automotive industry's shift towards hybrid and electric vehicles significantly boosts the demand for power transistors, particularly insulated gate bipolar transistors (IGBTs), which are essential for efficient power management in these vehicles. Collaborations between major companies, such as DENSO and United Semiconductor Japan, aim to enhance production capabilities, particularly with the introduction of 300mm wafer technology. This technological advancement is expected to support the mass production of IGBTs, which are crucial for electric vehicle motors. Additionally, the consumer electronics sector's need for energy-efficient devices, such as air conditioners and washing machines, further propels the demand for power transistors, as these devices increasingly rely on advanced switching technologies to reduce power consumption.

The market landscape is characterized by a competitive environment with several multinational corporations actively participating and innovating to meet local demands. Key players like Toshiba Electronic Devices & Storage Corporation, Mitsubishi Electric Corporation, and others are introducing new products and technologies, such as silicon carbide (SiC) MOSFETs and high-power modules, to enhance efficiency and performance in various applications. The market's growth is also supported by ongoing research and development activities, including international collaborations aimed at advancing semiconductor technologies. As the market continues to evolve, the focus on customized solutions and technological innovations is expected to drive further expansion and competition among vendors in the Japan power transistor market.

Explore More

Japan Power Transistor Market Size - Table of Contents

1. MARKET INSIGHTS
1. 1.1 Market Overview
2. 1.2 Industry Attractiveness - Porter's Five Forces Analysis
  1. 1.2.1 Threat of New Entrants
  2. 1.2.2 Bargaining Power of Buyers
  3. 1.2.3 Bargaining Power of Suppliers
  4. 1.2.4 Threat of Substitute Products
  5. 1.2.5 Intensity of Competitive Rivalry
3. 1.3 Assessment of Impact of COVID-19 on the Market
2. MARKET SEGMENTATION
1. 2.1 By Product
  1. 2.1.1 Low-Voltage FETs
  2. 2.1.2 IGBT Modules
  3. 2.1.3 RF and Microwave Transistors
  4. 2.1.4 High Voltage FETs
  5. 2.1.5 IGBT Transistors
2. 2.2 By Type
  1. 2.2.1 Bipolar Junction Transistor
  2. 2.2.2 Field Effect Transistor
  3. 2.2.3 Heterojunction Bipolar Transistor
  4. 2.2.4 Others (MOSFET, JFET, NPN Transistor, PNP Transistor, GaN transistor)
3. 2.3 By End-user Industry
  1. 2.3.1 Consumer Electronics
  2. 2.3.2 Communication and Technology
  3. 2.3.3 Automotive
  4. 2.3.4 Manufacturing
  5. 2.3.5 Energy & Power
  6. 2.3.6 Other End-user Industries