How big is the GaN Semiconductor Devices Market?

The GaN Semiconductor Devices Market size is expected to reach USD 4.34 billion in 2024 and grow at a CAGR of 21.64% to reach USD 11.57 billion by 2029. Read More

What is the current GaN Semiconductor Devices Market size?

In 2024, the GaN Semiconductor Devices Market size is expected to reach USD 4.34 billion. Read More

Which is the fastest growing region in GaN Semiconductor Devices Market?

Asia is estimated to grow at the highest CAGR over the forecast period (2024-2029). Read More

Which region has the biggest share in GaN Semiconductor Devices Market?

In 2024, the Asia accounts for the largest market share in GaN Semiconductor Devices Market. Read More

What years does this GaN Semiconductor Devices Market cover, and what was the market size in 2023?

In 2023, the GaN Semiconductor Devices Market size was estimated at USD 3.40 billion. The report covers the GaN Semiconductor Devices Market historical market size for years: 2019, 2020, 2021, 2022 and 2023. The report also forecasts the GaN Semiconductor Devices Market size for years: 2024, 2025, 2026, 2027, 2028 and 2029. Read More

GaN Semiconductor Devices Market Share

Statistics for the 2023 & 2024 GaN Semiconductor Devices market share, created by Mordor Intelligence™ Industry Reports. GaN Semiconductor Devices share report includes a market forecast to 2029 and historical overview. Get a sample of this industry share analysis as a free report PDF download.

Market Share of GaN Semiconductor Devices Industry

The GaN semiconductor devices market is semi-consolidated. Some of the significant players in the market are Toshiba Electronic Devices & Storage Corporation, Nexperia Holding BV (Wingtech Technology Co. Ltd), Infineon Technologies AG, Efficient Power Conversion Corporation, NXP Semiconductors NV, and many more. The companies are increasing their market share by forming multiple partnerships and investing in introducing new products to earn a competitive edge during the forecast period.

June 2024 - Infineon Technologies AG introduced the CoolGaNTransistor 700 V G4 product family. These devices excel in power conversion, specifically in the 700 V voltage range. These transistors boast a 20% performance boost in input and output figures-of-merit. This enhancement translates to heightened efficiency, minimized power losses, and more economical solutions. These applications span from consumer chargers and notebook adapters to data center power supplies, renewable energy inverters, and battery storage solutions.
May 2024 - Toshiba Electronic Devices & Storage Corporation held a ceremony to mark the completion of a new 300-millimeter wafer fabrication facility for power semiconductors and an office building at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, Japan, one of Toshiba's key group companies. Completing construction is a significant milestone for Phase 1 of Toshiba's multi-year investment program. Toshiba will now proceed with equipment installation and start mass production in the second half of the fiscal year 2024.